Titlebook: Introduction to Thin Film Transistors; Physics and Technolo S.D. Brotherton Book 2013 Springer International Publishing Switzerland 2013 Ac

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Hydrogenated Amorphous Silicon TFT Technology and Architecturethese processes are presented. Finally, some novel a-Si:H TFT structures are described, including self-aligned and short channel TFTs, as well as high stability devices deposited under conditions of enhanced hydrogen dilution of the PECVD reactant gases.

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Transparent Amorphous Oxide Semiconductor TFTs-held AMOLED displays. In this chapter, the material and electronic properties of AOS materials are reviewed, paying particular attention to a-InGaZnO TFTs. Other topics include device architecture and fabrication, the DOS and conduction mechanisms within the material, overall device performance, and bias stability issues.

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Introduction,diagonals currently available, this is the most ubiquitous and successful display technology to date. Screen sizes from 1 inch to more than 100 inches dominate applications in most areas of life, from small, portable mobile phone displays, through medium-sized tablets, net-books and lap-tops, to large-screen monitors and HD televisions.

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Poly-Si TFT Performanceand an overview of the bias stress instability mechanisms in these devices. Finally, there is a discussion of short channel effects, including the role of parasitic bipolar transistor action caused by floating body effects.

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Book 2013 interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. .The large scale manufacturing of a-Si:H TFTs forms the basis of the acti

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978-3-319-03310-5Springer International Publishing Switzerland 2013

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