| 书目名称 | Integrated Electronics on Aluminum Nitride | | 副标题 | Materials and Device | | 编辑 | Reet Chaudhuri | | 视频video | | | 概述 | Nominated as an outstanding PhD thesis by Cornell University, USA.Describes the principles, device physics, and applications of aluminum nitride electronics.Demonstrates how aluminum nitride can meet | | 丛书名称 | Springer Theses | | 图书封面 |  | | 描述 | This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics. | | 出版日期 | Book 2022 | | 关键词 | Aluminum nitride; Ultra-wide bandgap semiconductor; High-frequency communication materials; RF active d | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-031-17199-4 | | isbn_softcover | 978-3-031-17201-4 | | isbn_ebook | 978-3-031-17199-4Series ISSN 2190-5053 Series E-ISSN 2190-5061 | | issn_series | 2190-5053 | | copyright | The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl |
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发表于 2025-3-21 19:25:52
