Titlebook: Infrared Detectors and Emitters: Materials and Devices; Peter Capper,C. T. Elliott Book 2001 Springer Science+Business Media New York 2001

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Assessment of Infrared Materials and Devices,ideration when selecting a detector technology. The purpose of this introductory chapter is therefore two-fold. The first is to introduce some of the commonly used parameters and measurement techniques that are referenced in the later chapters. The second is to indicate the strengths and weaknesses of different infraredi technologies.

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Uncooled Microbolometer Infrared Sensor Arrays,ity, so that the IR heat energy dissipated in the IR-absorbing plate does not quickly leak away to the supporting substrate. Some type of temperature-sensitive device is placed on the absorbing plate, to measure the temperature changes produced by incident infrared radiation.

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Metal Silicide Schottky Infrared Detector Arrays, than other types of infrared detectors, the PtSi SB FPA technology has exhibited a remarkable advance by making the best use of its monolithic structure and excellent responsivity uniformity, and thus has survived in hard competition with other infrared technologies.

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Growth, Properties and Infrared Device Characteristics of Strained InAsSb-Based Materials,ronics, and quantum effects related to low effective mass. These properties, together with advances in III-V growth and processing technologies, have resulted in increased effort in research and development of InAsSb material and devices.

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