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Titlebook: Impact of Ion Implantation on Quantum Dot Heterostructures and Devices; Arjun Mandal,Subhananda Chakrabarti Book 2017 Springer Nature Sing

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Low-Energy Ion Implantation Over Single-Layer InAs/GaAs Quantum Dots, InAs/GaAs QDs. The main purpose of this study was to optimize the particular ion and its energy and fluence range for experiencing the impact of ion implantation further on In(Ga)As/GaAs QD-based device structures as discussed in the following chapters.
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,Effects of Low-Energy Light Ion (H−) Implantation on Quaternary-Alloy-Capped InGaAs/GaAs Quantum DoIn order to achieve better electrical and spectral behaviour, low-energy light ion (H.) implantations were performed over quaternary alloy-capped InGaAs/GaAs QDIPs. A reduction in dark current density along with enhanced detectivity was measured for the implanted devices as discussed in this present chapter.
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of quantum dot (QD) based devices.Discusses the structural a.This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decad
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Introduction to Quantum Dots,f self-assembled quantum dots are described in detail. Various in-situ and ex-situ techniques along with importance of different capping layers for improving electronic properties of self-assembled quantum dots are also referred in this chapter.
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in neuropsychological assessments.Addresses the changing rol.This ambitious and accessible guide reviews innovative technologies enhancing the field of neuropsychological testing. Starting with the premise that standard batteries—some nearly a century old—lag behind in our era of neuroimaging, genom
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