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Titlebook: III–V Compound Semiconductors and Devices; An Introduction to F Keh Yung Cheng Textbook 2020 Springer Nature Switzerland AG 2020 Compound S

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发表于 2025-3-21 18:51:24 | 显示全部楼层 |阅读模式
书目名称III–V Compound Semiconductors and Devices
副标题An Introduction to F
编辑Keh Yung Cheng
视频video
概述Gives a complete pedagogical introduction to III-V compound semiconductors.Includes detailed description of the nitride-based technologies.Includes chapter-end problems, clear schematics and suggestio
丛书名称Graduate Texts in Physics
图书封面Titlebook: III–V Compound Semiconductors and Devices; An Introduction to F Keh Yung Cheng Textbook 2020 Springer Nature Switzerland AG 2020 Compound S
描述.This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices..Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries..
出版日期Textbook 2020
关键词Compound Semiconductor Materials; Device Physics of Heterostructure Lasers; Heterostructure Band Diagr
版次1
doihttps://doi.org/10.1007/978-3-030-51903-2
isbn_ebook978-3-030-51903-2Series ISSN 1868-4513 Series E-ISSN 1868-4521
issn_series 1868-4513
copyrightSpringer Nature Switzerland AG 2020
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发表于 2025-3-21 21:40:38 | 显示全部楼层
III–V Compound Semiconductors and Devices978-3-030-51903-2Series ISSN 1868-4513 Series E-ISSN 1868-4521
发表于 2025-3-22 02:02:55 | 显示全部楼层
https://doi.org/10.1007/978-3-030-51903-2Compound Semiconductor Materials; Device Physics of Heterostructure Lasers; Heterostructure Band Diagr
发表于 2025-3-22 07:08:34 | 显示全部楼层
Keh Yung ChengGives a complete pedagogical introduction to III-V compound semiconductors.Includes detailed description of the nitride-based technologies.Includes chapter-end problems, clear schematics and suggestio
发表于 2025-3-22 10:37:56 | 显示全部楼层
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Electronic Band Structures of Solids,of a solid is introduced according to Bloch’s theorem. Finally, the interference at Brillouin zone boundaries leads to constructive and/or destructive interferences of electron waves forming the energy bandgap.
发表于 2025-3-23 02:26:04 | 显示全部楼层
Compound Semiconductor Crystals, location of the lowest conduction band minimum also varies with a decreasing degree of crystal symmetry in III–V compounds. Some of them have both the conduction band minimum and the valence band maximum located at the zone center. These are called . . semiconductors. This allows for their use in p
发表于 2025-3-23 06:20:49 | 显示全部楼层
Material Technologies,I-nitrides are still under development. Among epitaxial growth techniques, molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have evolved from laboratory experiment tools into viable manufacturing technologies. Hybrid epitaxial techniques such as gas source and metalor
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