Titlebook: III-Nitride Based Light Emitting Diodes and Applications; Tae-Yeon Seong,Jung Han,Hadis Morkoç Book 2017Latest edition Springer Nature Sin

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Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs,igh brightness InGaN LEDs on c-plane sapphire substrates [., .]. Already at the end of the last century blue and green LEDs with tens and hundreds of milli-Watt output power levels were demonstrated. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wav

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Internal Quantum Efficiency,luminescence and the resonant photoluminescence. The IQE droop mechanisms ever reported have been reviewed. An inherent origin of the efficiency droop has been suggested as the saturation of the radiative recombination rate in the InGaN quantum well at low current and subsequent increase in the nonr

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III-Nitride Tunnel Junctions and Their Applications,d tunneling in a heavily doped PN junction, in reverse bias, electrons tunnel from the filled states in the valence band to the empty states in the conduction band. Under forward bias, tunneling current is observed when electrons tunnel from filled states in the conduction band to empty states in th

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AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes,owth techniques for wide-bandgap AlN and AlGaN. Significant increases in internal quantum efficiency (IQE) have been achieved for AlGaN quantum well (QW) emissions by introducing low-threading-dislocation density (TDD) AlN grown by an NH. pulsed-flow multilayer growth method. Electron Injection effi

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Light Extraction of High-Efficient Light-Emitting Diodes,ototypes are then reviewed to investigate how their performance was enhanced by utilizing a variety of chip processes. The most efficient devices were found to be produced with unique fabrication processes, having at least one patterned sapphire substrate, chip shaping, vertical configuration, and/o

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