Titlebook: Hot Carriers in Semiconductors; Karl Hess,Jean-Pierre Leburton,Umberto Ravaioli Book 1996 Plenum Press, New York 1996 Exciton.MOSFET.Semic

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Spin-flip Dynamics of Excitons in GaAs Quantum Wellsund state can have either total spin J=1 or J=2, since they are comprised of a spin-1/2 conduction electron and a spin-3/2 hole. While a number of studies have examined the flip from +1 to -1 spin states, little experimental work has directly addressed the processes by which J=2, or “dark,” excitons

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Dynamics of Exciton Formation and Relaxation in Semiconductorscrystal lattice. Simultaneously, electron-hole (e-h) pairs may undergo assisted transitions to excitonic bound states. These free excitons are created with large center-of-mass wave vectors, . to become optically active they have to be scattered into states with . ≈ 0 and s-symmetry by inelastic col

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Time-Resolved Studies of Intersubband Relaxation Using the free Electron Laserhere the intersubband spacing is smaller than the optical phonon energy, rather long lifetimes are expected, consistent with intersubband relaxation by acoustic phonon scattering and Auger processes. However, this has not always been found to be the case, and lifetimes ranging from 20ps. to 1.6ns. h

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Far-Infrared Modulated Photocurrent in GaAs/AlGaAs Coupled Quantum Well Tunnelling Structureser using free electron lasers., or more conventional sources.. In principle, these FIR studies are able to determine the fundamental limits of the high frequency response, since there is a transition from classical rectification to quantum effects when the FIR frequency exceeds the intrinsic time co

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Dynamics of Excitons in a CdSe-ZnSe Multiple Quantum Welllayer thickness. In these QWs, hot carriers have not only kinetic energy but also potential energy which varies following the in-plane bandgap fluctuations. Apart from hot-exciton formation and relaxation as in the intrinsic QW, hot carrier relaxation in these QWs also includes the localisation of e

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Low Temperature Anti-Stokes Luminescence in CdTe/(Cd,Mg)Te Quantum Well Structuressource, has been studied in a variety of systems, such as atoms and molecules., polymers. and amorphous semiconductors.. The main issue addressed in these studies was the identification of the underlying microscopic mechanisms as, e.g., multi-photon processes, Auger recombination or thermal excitati