Titlebook: Highly Integrated Gate Drivers for Si and GaN Power Transistors; Achim Seidel,Bernhard Wicht Book 2021 The Editor(s) (if applicable) and T

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Achim Seidel,Bernhard Wichtization problems. Considering that the convergence and diversity of the population are two important indicators to measure the performance of the algorithm, a many-objective evolutionary algorithm with threshold elite selection strategy (MaOEA-TES) are proposed in this paper. The algorithm adopts th

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Introduction,r the next decade in growth areas like renewable energy, e-mobility, or industry. A key approach for reducing the system size is increasing the switching frequency. While this is very effective in shrinking down the size of passives, higher dynamic losses lead to more cooling effort. In recent years

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Gate Drivers Based on High-Voltage Charge Storing (HVCS),charge by increasing the voltage level at the capacitor. A size reduction by ∼70% could be achieved lowering the integration cost or even might enable an onchip integration of the capacitor. This brings many advantages in terms of miniaturization, switching speed, and robustness. Three options for H

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Gate Drivers Based on High-Voltage Energy Storing (HVES),r to achieve a resonant behavior. The integrated inductor can be placed on top of the buffer capacitor without area penalty. This way, HVES enables fast and energy-efficient switching of discrete GaN transistors without the need of an external buffer capacitor. HVES offers several design scenarios,

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