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Titlebook: High-Resolution X-Ray Scattering; From Thin Films to L Ullrich Pietsch,Václav Holý,Tilo Baumbach Textbook 2004Latest edition Springer Scien

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发表于 2025-3-21 16:26:47 | 显示全部楼层 |阅读模式
书目名称High-Resolution X-Ray Scattering
副标题From Thin Films to L
编辑Ullrich Pietsch,Václav Holý,Tilo Baumbach
视频video
概述Includes supplementary material:
丛书名称Advanced Texts in Physics
图书封面Titlebook: High-Resolution X-Ray Scattering; From Thin Films to L Ullrich Pietsch,Václav Holý,Tilo Baumbach Textbook 2004Latest edition Springer Scien
描述During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap­ pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.
出版日期Textbook 2004Latest edition
关键词Semiconductor; X-ray scattering; crystal; diffraction; nanostructure; quantum dot; thin film; thin films
版次2
doihttps://doi.org/10.1007/978-1-4757-4050-9
isbn_softcover978-1-4419-2307-3
isbn_ebook978-1-4757-4050-9Series ISSN 1439-2674
issn_series 1439-2674
copyrightSpringer Science+Business Media New York 2004
The information of publication is updating

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Diffractometers and Reflectometerser band pass of energy, and various recording units to detect the x-rays. In this chapter we deal with the experimental arrangement as a whole. There are general aspects to consider in setting-up an x-ray experiment: The sample is illuminated by an incident beam striking the sample surface under a d
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Semikinematical Theoryere we have neglected multiple scattering, and dynamical theory, where the multiple scattering processes have been treated exactly. In most cases, the kinematical approach is sufficient for scattering in thin layers; however, it fails in some cases, especially in a surface-sensitive arrangement, whe
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Diffuse Scattering From Volume Defects in Thin Layers layers. We deal with so called weak defects (point defects and their clusters, small precipitates of another phase in the crystal lattice) as well as with strong defects (dislocations and their pile-ups). The description is based on the theory explained in the monograph [207]. In contrast to this w
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X-Ray Scattering by Rough Multilayersillustrated by various examples. We describe the scattering potential of rough multilayers for x-ray reflection and later for x-ray diffraction; the multilayers are characterized by point properties and the correlation properties of their interfaces. General formulae are derived for the coherent par
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X-Ray Scattering by Artificially Lateral Semiconductor Nanostructuresperstructure with characteristic dimensions of a few nanometers up to a few microns. The scattering process includes the diffraction by the crystal lattice and by the superstructure. In reciprocal space the crystal lattice is represented by reciprocal lattice points. The superstructure of the gratin
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