| 书目名称 | High Dielectric Constant Materials |
| 副标题 | VLSI MOSFET Applicat |
| 编辑 | H.R. Huff,D.C. Gilmer |
| 视频video | |
| 概述 | High-dielectric-constant materials have a huge potential for applications in microelectronic devices..This book provides the most comprehensive survey on their properties, processing and applications. |
| 丛书名称 | Springer Series in Advanced Microelectronics |
| 图书封面 |  |
| 描述 | .Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore‘s Law, the classical regime for SiO.2. gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.. |
| 出版日期 | Book 2005 |
| 关键词 | CMOS; Leistungsfeldeffekttransistor; Technologie; VLSI; circuit; dielectrics; electronic structure; field-e |
| 版次 | 1 |
| doi | https://doi.org/10.1007/b137574 |
| isbn_softcover | 978-3-642-05921-6 |
| isbn_ebook | 978-3-540-26462-0Series ISSN 1437-0387 Series E-ISSN 2197-6643 |
| issn_series | 1437-0387 |
| copyright | Springer-Verlag Berlin Heidelberg 2005 |
发表于 2025-3-21 17:49:28
