书目名称 | Hierarchical Device Simulation |
副标题 | The Monte-Carlo Pers |
编辑 | Christoph Jungemann,Bernd Meinerzhagen |
视频video | http://file.papertrans.cn/427/426130/426130.mp4 |
概述 | First monograph on physics-based simulations of novel strained Si and SiGe devices.In-depth description of the full-band monte-carlo method for SiGe.Comprehensive description of the momentum-based and |
丛书名称 | Computational Microelectronics |
图书封面 |  |
描述 | This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical semiconductor device modeling basically implied the application of the drift-diffusion model. On the one hand, those talks clearly showed the potential of the Monte-Carlo model for an accurate description of many important transport issues that cannot adequately be addressed by the drift-diffusion approximation. On the other hand, they also clearly demonstrated that at that time only very few experts were able to extract useful results from a Monte-Carlo simulator. With this background, Monte-Carlo research activities were started in 1986 at the University of Aachen (RWTH Aachen), Germany. Different to many other Monte-Carlo research groups, the Monte-Carlo research in Aachen took place in an environment of active drift-diffusion and hydrodynamic model development. |
出版日期 | Book 2003 |
关键词 | Analysis; Monte-Carlo Simulation; Norm; Signal; Transport; computer-aided design (CAD); microprocessor; mod |
版次 | 1 |
doi | https://doi.org/10.1007/978-3-7091-6086-2 |
isbn_softcover | 978-3-7091-7226-1 |
isbn_ebook | 978-3-7091-6086-2Series ISSN 0179-0307 |
issn_series | 0179-0307 |
copyright | Springer-Verlag Wien 2003 |