Titlebook: Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures; Kamakhya Prasad Ghatak,Madhuchhanda Mitra,Arindam

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书目名称Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures影响因子(影响力)




书目名称Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures影响因子(影响力)学科排名




书目名称Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures网络公开度




书目名称Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures网络公开度学科排名




书目名称Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures被引频次




书目名称Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures被引频次学科排名




书目名称Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures年度引用




书目名称Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures年度引用学科排名




书目名称Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures读者反馈




书目名称Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures读者反馈学科排名

涂掉

The HUP and the ES in Nanowires of HD Non-parabolic Materials,device applications in low dimensional electronics. In this chapter we study chronologically the . and EEM for the HDNWs as written in the content of the said chapter. It appears that the Fermi energy decreases with increasing . and decreasing ., decreasing . all the HDNWs of the indicated materials.

ANTE

The HUP and the ES in Doping Superlattices of HD Non-parabolic Semiconductors, and . of HDDSL as considered here with different numerical magnitudes which are totally band structure dependent. Besides, the EEM exhibits the same behavior with respect ., . and . where the numerical values are totally different for different HDDSLs.

orient

The HUP and the ES in HD Non-parabolic Semiconductors Under Cross-Fields Configuration,iling effect. The cross fields introduces energy and quantum number dependent mass anisotropy. The DMR oscillates with 1/B and n. due to SdH effect, increases with increasing electric field and decreasing alloy composition respectively.

harbinger

The HUP and the ES in Heavily Doped (HD) Non-parabolic Semiconductors Under Magneto-Size Quantizatier magnetic quantization in UFs of HD III–V, II–VI, IV–VI, stressed Kane type semiconductors, Te, GaP, PtSb2, Bi2Te3, Ge, GaSb, II–V and Lead Germanium Telluride respectively. It may be noted that the determination of any electronic property in QWs of HD non-parabolic materials under magneto-size quantization, needs the ES.

表否定

陈腐思想

IRATE

effect devices.Is a useful read for researchers, students, This book highlights the importance of Electron Statistics (ES), which occupies a singular position in the arena of solid state sciences, in heavily doped (HD) nanostructures by applying Heisenberg’s Uncertainty Principle directly without u

orient

Extricate

Kamakhya Prasad Ghatak,Madhuchhanda Mitra,Arindam Biswasand hold-mode feed-through. The different elements: switch, capacitor and buffer are discussed. Some architectures and often applied implementation schemes are shown. The trade-off between noise and distortion requires a careful balance to achieve the optimum performance.