书目名称 | Heavily-Doped 2D-Quantized Structures and the Einstein Relation |
编辑 | Kamakhya P. Ghatak,Sitangshu Bhattacharya |
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概述 | Describes measurements of band gap in optoelectronic nanodevices under intense electric field and strong external photo excitation.Presents 100 open research problems.Covers a wide range of different |
丛书名称 | Springer Tracts in Modern Physics |
图书封面 |  |
描述 | This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under |
出版日期 | Book 2015 |
关键词 | 2D-quantized Structures; Einstein Relation in Semiconductors Under Strong Electric Field; Einstein Rel |
版次 | 1 |
doi | https://doi.org/10.1007/978-3-319-08380-3 |
isbn_softcover | 978-3-319-38127-5 |
isbn_ebook | 978-3-319-08380-3Series ISSN 0081-3869 Series E-ISSN 1615-0430 |
issn_series | 0081-3869 |
copyright | Springer International Publishing Switzerland 2015 |