Titlebook: Emerging VLSI Devices, Circuits and Architectures; Proceedings of the 2 Anu Gupta,Jai Gopal Pandey,Devesh Dwivedi Conference proceedings 20

军械库

SLAY

https://doi.org/10.1007/978-3-540-31292-5 leakage between adjacent stages of clock booster is prevented with the help of a circuit that blocks the reverse flowing charges. The simulation results show that the proposed circuit gives an output more than 1 V while for similar conditions a conventional clock booster provides less than 500 mV.

BRINK

monopoly

粉笔

E. Edmund Kim,Edward F. Jacksonogether to tune the inductance and hence the operating range of frequency. The proposed AI is designed using CMOS 180 nm technology and simulation shows that for 3–4 GHz frequency range ranging from 13-15nH. The Q-factor and inductance at 3.6 GHz operating frequency is 1750 and 14nH. At 1.8 V supply it dissipates 3.8 mW of power.

Compatriot

https://doi.org/10.1007/978-3-031-35098-6r supply, with a power consumption of 754 µW. The proposed MREC works in the MHz range and the maximum working frequency is 25 MHz. To assess the flexibility of the proposed MREC during circuit employment, two memristors were connected in parallel and performance was compared with a single memristor.

asthma

Results and Problems in Cell DifferentiationThe total power consumption of the circuit is found to be 57 nW and achieves FoM of 336 fJ/conversion for 7 bits of operation with a power supply of 0.5 V. The proposed design has the lowest power consumption and FoM among the reported current mode and neuromorphic ADCs.

agnostic

https://doi.org/10.1007/BFb0018037uch as dielectric constant (K) has been considered. To assess the sensing potential of both devices, we also compared the sensitivity, and noise characteristics of the stacked thin layers of HfO./SiO. and Al.O./SiO.. From the comparison, the stacked HfO./SiO. thin layer shows the better sensitivity and noise characteristics.

HPA533

,A 0.1–4.71 GHz Integer-N CP-PLL-Based Low-Power Frequency Synthesizer for High-Speed Applications,hip area of 0.013 .. The proposed synthesizer exhibits a phase noise of –142.54 dBc/Hz at an output frequency of 4 GHz. This synthesizer achieves a Figure of Merit (FoM) of –174.49 dB. The synthesizer has potential applications in devices such as radio receivers, televisions, mobile phones, satellite receivers, and GPS systems.

output

,A Current-Mode-Logic-Based PFD–Charge Pump Circuit for Low-Reference Spur PLLs,equency divider. The reference frequency is 50 MHz. The circuits are designed in TSMC 65 nm process, and consume 0.81 mW from a 1.2-V power supply. In simulations, the PLL exhibits an in-band phase noise of −112dBc/Hz at a 100-kHz offset, a reference spur of −72.2 dBc, and a lock time of 2.6 µs.