书目名称 | Electronic Structure of Semiconductor Interfaces |
编辑 | Winfried Mönch |
视频video | |
概述 | Explains the formation of interface-induced gap states and electric dipoles in Schottky contacts and heterostructures.Includes experimental Schottky barrier heights, slope parameters, and valence-band |
丛书名称 | Synthesis Lectures on Engineering, Science, and Technology |
图书封面 |  |
描述 | .This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal–semiconductor or .Schottky. contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of .Schottky. contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. |
出版日期 | Book 2024 |
关键词 | metal semi-conductor; band gap; interface-induced gap states; band structure; semiconductor interfaces |
版次 | 1 |
doi | https://doi.org/10.1007/978-3-031-59064-1 |
isbn_softcover | 978-3-031-59066-5 |
isbn_ebook | 978-3-031-59064-1Series ISSN 2690-0300 Series E-ISSN 2690-0327 |
issn_series | 2690-0300 |
copyright | The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl |