Titlebook: Epitaxy of Semiconductors; Physics and Fabricat Udo W. Pohl Textbook 2020Latest edition Springer Nature Switzerland AG 2020 Semiconductor N

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Atomistic Aspects of Epitaxial Layer-Growth,processes, which are characterized by such energy barriers. We consider the ideal and the real structure of a crystal surface, and discuss kinetic steps occurring during nucleation and growth. At the end of the chapter phenomena of self-organization employed for epitaxial growth of nanostructures are presented.

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978-3-030-43871-5Springer Nature Switzerland AG 2020

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Structural Properties of Heterostructures, on perfect, polytype, and mixed bulk crystals we focus on elastic properties of pseudomorphic strained-layer structures. Then the concept of critical layer thickness is introduced, and dislocations relieving the strain in epitaxial layers are presented. X-ray diffraction—the standard tool for struc

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Structure of Organic Crystals,ugated π electrons. By contrast only weak intermolecular Van der Waals forces act between neutral nonpolar molecules, yielding usually defective crystals with a low stability. In two-component crystals additional longer-ranging dipole and Coulomb interactions occur. The weak intermolecular bonding f

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Electronic Properties of Organic Semiconductors,tion bands of their inorganic counterparts. Organic crystals have comparatively narrow bands and large bandgaps, and they feature strong anisotropies. The Gaussian density of states of HOMO and LUMO supplemented by defect states produces a substantial tailing of the bands into the bandgap. The stron