Titlebook: Epioptics; Linear and Nonlinear J. F. McGlip,D. Weaire,C. H. Patterson Book 1995 ECSC-EC-EAEC, Brussels-Luxembourg 1995 Epitaxy.Growth moni

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哥哥喷涌而出

https://doi.org/10.1007/978-3-642-35958-3In Sect. 1.5, second-harmonic and sum-frequency generation (SHG and SFG) at surfaces and interfaces was introduced. Experimental results are discussed in Chapter 8. Various aspects of the theory of SHG at surfaces and interfaces are discussed in this chapter.

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https://doi.org/10.1007/978-1-349-20038-2n difficult (“interface”, from now on, is understood to include the surface, which is the condensed matter-ambient interface). Even in the near ultra-violet (UV) region, the interface contribution to the linear reflectivity from a semiconductor will only be a few percent. However, deeper understandi

FRET

The Directed Attention Progression,] and surface differential reflectance (SDR) [7–15]. These experimental techniques were outlined in Ch. 1, and are described in detail in Ch. 4. This chapter describes calculations of the RAS and SDR spectra from clean and adsorbate-covered Si, GaAs and GaP surfaces. The experiments aim to extract i

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https://doi.org/10.1007/978-3-030-53214-7etals, semiconductors and insulators [3]. Ellipsometry is nowadays quite intensively employed in semiconductor characterisation and has the potential for in situ diagnostics of surfaces. The principle of ellipsometry is based on the fact that the status of light polarisation is changed when light is

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Matrimony

Lecture Notes in Computer Sciencend these phenomena may be surface sensitive at non-destructive power densities. For centrosymmetric materials, an order of magnitude calculation shows that the surface effect should be at least comparable in size to the higher order nonlocal bulk effects [1]. Initial surface SHG studies in the 1960s