Titlebook: Emerging Trends in Terahertz Solid-State Physics and Devices; Sources, Detectors, Arindam Biswas,Amit Banerjee,Jintendra Nath Roy Book 202

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https://doi.org/10.1007/978-3-031-48777-4miconducting substances like 3C-SiC and type-IIb diamond (C) as millimeter-wave (mm-wave) and terahertz (THz) wave generators; noise characteristics of those sources have been compared with the DDR IMPATTs on the basis of traditional substance, i.e., Si. The simulation studies show that the WBG semi

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https://doi.org/10.1007/978-3-662-25234-5). The device structure has been simulated and analyzed using TCAD device simulator taking non-local band-to-band tunneling (BTBT) into consideration. We have accounted the fundamental limits of InN tunnel FET devices arising from the basic material properties by numerical simulation and analytical

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Thomas D. Grant,Damon J. Wischikally vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane’s matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation. W

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https://doi.org/10.1007/978-3-319-10819-3hy is such an imaging technique which uses subatomic wavelengths, whereas on the other hand radars employ waves with wavelengths of several metres. However, it is seen that in last several years the field of terahertz imaging technology has become an area of interest, due to its various advantages.

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