Titlebook: Emerging Technologies and Circuits; Amara Amara,Thomas Ea,Marc Belleville Book 2010 Springer Science+Business Media B.V. 2010 CMOS.FinFET.

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Assessment of Spasticity in Adultsnsumption. Catastrophic increase in static power consumption due to shot channel effects (SCEs) becomes the serious problem in future VLSI circuits. Especially, the leakage current in the SRAM array is the most critical issue for a low-power SoC because it occupies the considerable part of LSIs.

LEER

https://doi.org/10.1007/978-3-642-93404-9er (LP) CMOS designs, where the over-drive voltage is less than two times of the threshold voltage. As the voltage scales down, circuits become increasingly sensitive to the variability. As a result, circuit design for low-power process technologies with low supply voltages becomes extremely challenging.

富饶

Independent-Double-Gate FINFET SRAM Cell for Drastic Leakage Current Reductionnsumption. Catastrophic increase in static power consumption due to shot channel effects (SCEs) becomes the serious problem in future VLSI circuits. Especially, the leakage current in the SRAM array is the most critical issue for a low-power SoC because it occupies the considerable part of LSIs.

seruting

Process Variability-Induced Timing Failures – A Challenge in Nanometer CMOS Low-Power Designer (LP) CMOS designs, where the over-drive voltage is less than two times of the threshold voltage. As the voltage scales down, circuits become increasingly sensitive to the variability. As a result, circuit design for low-power process technologies with low supply voltages becomes extremely challenging.

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A Simple Compact Model to Analyze the Impact of Ballistic and Quasi-Ballistic Transport on Ring Oscired in the modeling of ultra-short Double-Gate devices with an accurate description. Since the conventional Drift-Diffusion model (usually considered as a standard simulation level for devices) fails at describing ballistic transport, new specific models have to be developed for this regime.

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Low-Voltage Scaled 6T FinFET SRAM Cellsetc., can result in a large variability in performance and power. The possibility of leaving the channels undoped and their excellent immunity against Short Channel Effects (SCE) favors the use of FinFET-based multi-gate devices [3] for these technology nodes.

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Analysis of SI Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposel the damage, the plasma-induced defects in Si surface layer should be quantitatively estimated, and then, plasma designs should be optimized. Defect generation probability was proposed from an optical analysis as a measure of the damage [7], on one hand. With regard to plasma design, on the other,

DEVIL

Resilient Circuits for Dynamic Variation Tolerancemance by increasing F. or lower power by lowering V. during favorable operating conditions. Since most systems usually operate at nominal conditions where worst-case scenarios rarely occur, these infrequent dynamic variations severely limit the performance and energy efficiency of conventional micro