找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Electronic Properties of Semiconductor Interfaces; Winfried Mönch Book 2004 Springer-Verlag Berlin Heidelberg 2004 Interface-induced gap s

[复制链接]
查看: 19546|回复: 47
发表于 2025-3-21 16:10:59 | 显示全部楼层 |阅读模式
书目名称Electronic Properties of Semiconductor Interfaces
编辑Winfried Mönch
视频video
概述Basic standard book.Important with respect to semiconductor structures.Includes supplementary material:
丛书名称Springer Series in Surface Sciences
图书封面Titlebook: Electronic Properties of Semiconductor Interfaces;  Winfried Mönch Book 2004 Springer-Verlag Berlin Heidelberg 2004 Interface-induced gap s
描述.Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively. .
出版日期Book 2004
关键词Interface-induced gap states; Metal-semiconductor contacts; Schottky contacts; Semiconductor heterostru
版次1
doihttps://doi.org/10.1007/978-3-662-06945-5
isbn_softcover978-3-642-05778-6
isbn_ebook978-3-662-06945-5Series ISSN 0931-5195 Series E-ISSN 2198-4743
issn_series 0931-5195
copyrightSpringer-Verlag Berlin Heidelberg 2004
The information of publication is updating

书目名称Electronic Properties of Semiconductor Interfaces影响因子(影响力)




书目名称Electronic Properties of Semiconductor Interfaces影响因子(影响力)学科排名




书目名称Electronic Properties of Semiconductor Interfaces网络公开度




书目名称Electronic Properties of Semiconductor Interfaces网络公开度学科排名




书目名称Electronic Properties of Semiconductor Interfaces被引频次




书目名称Electronic Properties of Semiconductor Interfaces被引频次学科排名




书目名称Electronic Properties of Semiconductor Interfaces年度引用




书目名称Electronic Properties of Semiconductor Interfaces年度引用学科排名




书目名称Electronic Properties of Semiconductor Interfaces读者反馈




书目名称Electronic Properties of Semiconductor Interfaces读者反馈学科排名




单选投票, 共有 1 人参与投票
 

0票 0.00%

Perfect with Aesthetics

 

0票 0.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

1票 100.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 21:22:47 | 显示全部楼层
Book 2004ing’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively. .
发表于 2025-3-22 00:35:22 | 显示全部楼层
发表于 2025-3-22 07:24:20 | 显示全部楼层
The IFIGS-and-Electronegativity Concept: Experiment and Theory,orce lowering .. Only the homogeneous barrier heights .are a reliable basis for a comparison with theoretically values Local variations of the barrier heights of real Schottky contacts on the nm-scale were directly detected by scanning ballistic-electron emission spectroscopy. The respective local B
发表于 2025-3-22 11:32:39 | 显示全部楼层
发表于 2025-3-22 15:10:56 | 显示全部楼层
发表于 2025-3-22 17:40:41 | 显示全部楼层
Informatorium voor Voeding en Diëtetiekorce lowering .. Only the homogeneous barrier heights .are a reliable basis for a comparison with theoretically values Local variations of the barrier heights of real Schottky contacts on the nm-scale were directly detected by scanning ballistic-electron emission spectroscopy. The respective local B
发表于 2025-3-22 21:54:45 | 显示全部楼层
Voeding bij galblaas- en leveraandoeningen, . [1988, 1990], . et al. [1994] and . et al. [1999] calculated the quasi-particle shifts of the valence-band maxima of the III–V and the II–VI compound semiconductors in the GW approximation. The quasi-particle corrections move the valence band-maxima to lower energies and, on the average, the GW c
发表于 2025-3-23 05:26:09 | 显示全部楼层
发表于 2025-3-23 08:15:46 | 显示全部楼层
W.K. Visser,S. Runia,J. Tiebie,Y.F. Heerkenshe current density is then given by..where , .. and .. are the electron mobility and diffusion constant, respectively. The electric-field strength .(.) in the barrier region may be written as ...(.) = d[W.(.) − ..]/dz, where the conduction-band bottom ..(.) is referenced to the energy position .. of the Fermi level in the metal bulk.
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-6-9 04:20
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表