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Titlebook: Electronic Properties of Rhombohedral Graphite; Servet Ozdemir Book 2021 The Editor(s) (if applicable) and The Author(s), under exclusive

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发表于 2025-3-21 19:06:23 | 显示全部楼层 |阅读模式
书目名称Electronic Properties of Rhombohedral Graphite
编辑Servet Ozdemir
视频video
概述Nominated as an outstanding Ph.D. thesis by The University of Manchester, Manchester, UK.First ever systematic electron transport study of pristine rhombohedral graphite films of up to 50 layers thick
丛书名称Springer Theses
图书封面Titlebook: Electronic Properties of Rhombohedral Graphite;  Servet Ozdemir Book 2021 The Editor(s) (if applicable) and The Author(s), under exclusive
描述This thesis presents the first systematic electron transport investigation of rhombohedral graphite (RG) films and thus lies at the interface of graphene physics, vdW heterostructure devices and topological matter. Electron transport investigation into the rhombohedral phase of graphite was limited to a few layers of graphene due to the competing hexagonal phase being more abundant. This work reports that in exfoliated natural graphite films, rhombohedral domains of up to 50 layers can be found. In the low energy limit, these domains behave as an N-layer generalisation of graphene. Moreover, being a potential alternative to twisted bilayer graphene systems, RG films show a spontaneous metal-insulator transition, with characteristic symmetry properties that could be described by mean-field theory where superconductivity is also predicted in these low energy bands. A nodal-line semimetal in the bulk limit, RG thin films are a 3D generalisation of the simplest topological insulator model:the Su-Schrieffer-Heeger chain. Similar to the more usual topological insulators, RG films exhibit parallel conduction of bulk states, which undergo three-dimensional quantum transport that reflects b
出版日期Book 2021
关键词Van Der Waals Heterostructures; ABC Multilayer Graphene; Rhombohedral Graphite; Flat Bands; Quantum Tran
版次1
doihttps://doi.org/10.1007/978-3-030-88307-2
isbn_softcover978-3-030-88309-6
isbn_ebook978-3-030-88307-2Series ISSN 2190-5053 Series E-ISSN 2190-5061
issn_series 2190-5053
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
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发表于 2025-3-21 21:44:23 | 显示全部楼层
,Bulk Versus Surface Conduction in Rhombohedral Graphite Films, conduction. These crystals require careful crystal growth under laboratory conditions to unleash their topological properties, unlike rhombohedral graphite films which are exfoliated from high quality crystals of naturally occurring graphite.The bulk band gap of rhombohedral graphite films, in the
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Landau Level Spectroscopy of Rhombohedral Graphite Films,tes. One of the most powerful techniques to characterise electronic structure of high-quality two-dimensional systems is to study their magnetic field dependence, including the study of quantum Hall effect and carrying out of Landau level spectroscopy experiments. Hence, this chapter will be dedicat
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Three Dimensional Quantum Interference of Bulk Electrons, on three-dimensional transport properties bulk electrons in high quality thin film devices of rhombohedral graphite, a nodal line system in bulk limit. We show that bulk electrons show a thickness dependent cross-over from three dimensional weak anti-localization to weak localization as well as a q
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2190-5053 ristine rhombohedral graphite films of up to 50 layers thickThis thesis presents the first systematic electron transport investigation of rhombohedral graphite (RG) films and thus lies at the interface of graphene physics, vdW heterostructure devices and topological matter. Electron transport invest
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E.J. de Boer,M.C. Ocké,C.T.M. van Rossumsional transport, bulk of rhombohedral graphite films exhibit three-dimensional quantum interference influenced by bulk topology, which has so far been seen on exotic crystal systems such as Weyl and Dirac semimetals.
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