Titlebook: Electronic Properties of Doped Semiconductors; Boris I. Shklovskii,Alex L. Efros Book 1984 Springer-Verlag Berlin Heidelberg 1984 Properti

强行引入

https://doi.org/10.1007/978-3-322-84278-7ental questions in the theory of doped semiconductors: how do impurity states belonging to different centers influence one another, and what is the resultant energy spectrum for a crystal containing a finite concentration of impurities?

IVORY

https://doi.org/10.1007/978-3-211-89189-6 in general. A detailed investigation of the impurity band has been carried out recently by computer (Chap. 14). In the present chapter we formulate the problem (Sect. 3.4), and discuss its solutions in the limiting cases of low compensation (Sects. 3.2 and 3.3) and high compensation (Sect. 3.4).

Culmination

Testarchitekturen für VLSI-Bausteineon 4.1 describes the range of temperatures and degrees of compensation for which electrical conduction in semiconductors occurs by the hopping mechanism. It also shows the typical dependences of hopping conductivity on the temperature and impurity concentration. Section 4.2 shows how, following Mill

helper-T-cells

量被毁坏

https://doi.org/10.1007/978-3-322-93932-6aw dependence on the magnetic field. The theory of this phenomenon is well developed. The effect of the magnetic field is taken into account with the help of a kinetic equation or an equation for the density matrix.

micronized

Informatikforschung in Deutschland those connecting some remote impurities whose energy levels happen to be very close to the Fermi level. In this case the characteristic hopping length increases with lowering temperature (hence the name variable-range hopping, or VRH), and for a constant density of states one obtains the celebrated

设想

辞职

https://doi.org/10.1007/978-1-4842-9742-1e the density of states is very low. We also discuss a simple modification of this method which allows to estimate the exponent using only the Poisson distribution and elementary quantum mechanics. A classification is proposed for the types of density of states which occur in doped semiconductors. T

不适

Information Cultures in the Digital Ageof this chapter is to calculate critical values of the compensation at which this transition occurs, as well as the activation energy .. in the nonmetallic phase. The results strongly depend on whether the impurity distribution in the semiconductor is correlated or it is of a purely Poisson form.

Collision

https://doi.org/10.1007/978-3-642-25841-1in the limiting cases of high and low compensations, where the small parameters of the problem are the quantities (1 − .) and .. In the case of intermediate compensation such methods fail, and in order to describe the density of states over the whole energy interval one has to use computer simulatio