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Titlebook: Electronic Processes on Semiconductor Surfaces during Chemisorption; T. Wolkenstein Book 1991 Consultants Bureau, New York 1991 Potential.

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发表于 2025-3-21 16:21:35 | 显示全部楼层 |阅读模式
书目名称Electronic Processes on Semiconductor Surfaces during Chemisorption
编辑T. Wolkenstein
视频video
图书封面Titlebook: Electronic Processes on Semiconductor Surfaces during Chemisorption;  T. Wolkenstein Book 1991 Consultants Bureau, New York 1991 Potential.
描述"Hands are useless if there are no eyes to see what is obvious." -M. V. Lomonosov Dear Reader, I invite you to open this book and step on the semiconductor surface, where the processes that form the subject of the book come into play. The surface of the semiconductor is attracting more and more interest among researchers, in fact researchers in two different fields. These are notably the physicists and engineers engaged in research in semi­ conductor physics and the making of semiconductor devices. The entire industry of semiconductor instruments hinges on the problem of the surface. The quality of semiconductor devices, whose use is growing steadily, depends essentially on the properties of the surface. The instability of these properties and their uncon­ trollable alterations with temperature and under the influence of environmental conditions result in a lack of stability in the performance of semiconductor devices, hence the high percentage of waste in their industrial production. The methods used in factory laboratories to prevent such waste are largely empirical. The properties of the surface, the nature of the physicochemical processes that take place on it, and the role of
出版日期Book 1991
关键词Potential; defects; electrons; production; semiconductor; semiconductor devices
版次1
doihttps://doi.org/10.1007/978-1-4615-3656-7
isbn_ebook978-1-4615-3656-7
copyrightConsultants Bureau, New York 1991
The information of publication is updating

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Electron Transitions in Chemisorption,d state, may change the character of its bond with the surface, i.e., may change from a state with one type of bond to a state with another. These transitions indicate that there is localization or localization of a free electron or hole at the adsorbed particle or in its neighborhood (see Figs. 2.7
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The Interaction Of The Surface With The Bulk In A Semiconductor,number of surface properties, such as the chemisorptivity of the surface, the charge of the surface, and the reactivity of the chemisorbed partic1es, are determined, as we have seen, by the position of the Fermi level at the crystal surface. Here we will characterize the position of the Fermi level
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The Catalytic Effect of a Semiconductor,hemical reactions. Such typical semiconductors as cuprous oxide, zinc oxide, and vanadium pentoxide are at the same time typical catalysts. Semiconductors serve as catalysts for many chemical reactions, including oxidation and hydrogenation.
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Processes on a Real Surface,These deviations, which also arise both in adsorption kinetics and in adsorption equilibrium (non-Langmuir isotherms and the dependence of the differential adsorption heat on surface coverage), indicate the violation of one or more of the initial assumptions unnderlying Langmuir’s theory.
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Conclusion,s dealing with the interaction of an adsorbed particle with an adsorption center. Here both the electrons of the particles being adsorbed and those of the particle at which the adsorption takes place are involved. This group of problems is commonly known as the local interaction problem. But there a
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