Titlebook: Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures; Marco Fanciulli Book 2009 Springer-Verlag Berlin Heidelberg 2

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,A Robust and Fast Method to Compute Shallow States without Adjustable Parameters: Simulations for aue to analytical expression of relevant Hamiltonian terms – the energy levels of the shallow P impurity in silicon and the hyperfine and superhyperfine splitting of the ground state. We have studied the dependence of these quantities on the applied external electric field along the [001] direction.

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Rural Housing Since 1949: An Overall View,e coherent single-spin manipulation, we propose quantum-dot devices with an integrated high-frequency line designed to generate an ac magnetic field. We also discuss in detail the electric dipole spin resonance realized with a slanting Zeeman field. After discussions of the exchange coupling between

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The State and the Housing Question, in liquid and solid matter as well as providing important information on spin and vortex dynamics. While significant progress has been achieved in NMR spectroscopy, conventional . NMR remains essentially a . technique that proves to be extremely difficult to scale down to systems of very small size

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nostructure systems. First, we describe experiments in a real transistor structure (i.e., a submicrometer commercial Si field effect transistor) in which the source/drain channel is used to electrically detect the spin states of an adjacent single paramagnetic spin center. This transistor structure

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High-Density Housing in Australia,rostructure. Firstly, we clarify the origin of the ESR-induced resistivity change by optimizing the configuration among the Landau levels and the chemical potential. The observed decrease in the longitudinal resistivity shows that the primary cause is a change in the chemical potential, not a rise i

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The Commoning and Eurhythmisation of the ,,ate for quantifying decoherence for quantum registers. For a semiconductor double quantum-dot charge qubit, evaluation of this measure is presented. For a general class of decoherence processes, including those occurring in semiconductor qubits, we establish that this measure is additive: It scales