Titlebook: Electrical and Optical Properties of Semiconductors; D. V. Skobel’tsyn (Academician, Director) Book 1968 Consultants Bureau 1968 optical p

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HIV Glycomics and Glycoproteomics,n considerable changes in its electrical and optical properties (the electrical conductivity, the transparency, etc.). The properties of a semiconducting crystal are usually altered by the introduction of impurity atoms of certain substances into the lattice of the crystal, i.e., by doping. The irra

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Radiative Recombination at Dislocations in Germanium,is phenomenon, such as lasers and semiconductor sources of incoherent radiation [1, 2], but also due to the fact that investigations of recombination radiation yield important information on the properties of semiconducting materials.

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Investigation of the Infrared Absorption Spectrum of Neutron-Irradiated Silicon,n considerable changes in its electrical and optical properties (the electrical conductivity, the transparency, etc.). The properties of a semiconducting crystal are usually altered by the introduction of impurity atoms of certain substances into the lattice of the crystal, i.e., by doping. The irra

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Electrical and Optical Properties of Electroluminescent Capacitors Based on ZnS:Cu,uminescence was used only for the luminescence of gaseous systems (gas-discharge luminescence); the electroluminescence of solids was only discovered much later. The occurrence of electroluminescence in liquids has not yet been proved satisfactorily. In the present paper, we shall consider only the

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Electrical and Optical Properties of Semiconductors978-1-4615-8552-7

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Investigation of the Infrared Absorption Spectrum of Neutron-Irradiated Silicon,gh-energy radiations on semiconducting crystals are of great interest. They are also of importance in relation to the use of semiconducting devices in situations where they are subjected to radiation or where they are used directly as radiation detectors.