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Titlebook: Einstein Relation in Compound Semiconductors and Their Nanostructures; Kamakhya Prasad Ghatak,Sitangshu Bhattacharya,Deba Book 2009 Spring

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The Einstein Relation in Quantum Wires of Compound Semiconductors,by two infinitely deep 1D rectangular potential wells, along any two orthogonal directions leading to the quantization of the wave vectors along the said directions, allowing 1D carrier transport [1]. With the help of modern fabricational techniques, such one dimensional quantized structures have be
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The Einstein Relation in Inversion Layers of Compound Semiconductors,a one dimensional potential well whose width is of the order of the carrier wavelength, the motion in that particular direction gets quantized while that along the other two directions remains as free. Thus, the energy spectrum appears in the shape of discrete levels for the one dimensional quantiza
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The Einstein Relation in Nipi Structures of Compound Semiconductors,alternative layers of two different degenerate layers with controlled thickness [1]. These structures have found wide applications in many new devices such as photodiodes [2], photoresistors [3], transistors [4], light emitters [5], tunneling devices [6], etc. [7–18]. The investigations of the physi
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The Einstein Relation in Superlattices of Compound Semiconductors in the Presence of External Field by Esaki and Tsu [2]. The importance of SLs in the field of nanoelectron-ics have already been described in [3–5]. The most extensively studied III–V SL is the one consisting of alternate layers of GaAs and Ga.Al.As owing to the relative ease of fabrication. The GaAs layers form quantum wells and G
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The Einstein Relation in Compound Semiconductors in the Presence of Light Waves, [1]. It appears from the literature, that the investigations have been carried out on the assumption that the carrier energy spectra are invariant quantities in the presence of intense light waves, which is not fundamentally true. The physical properties of semiconductors in the presence of light w
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