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Titlebook: Effects of Radiation on Semiconductors; Viktor Sergeevich Vavilov Book 1965 Springer Science+Business Media New York 1965 crystal.electron

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书目名称Effects of Radiation on Semiconductors
编辑Viktor Sergeevich Vavilov
视频video
图书封面Titlebook: Effects of Radiation on Semiconductors;  Viktor Sergeevich Vavilov Book 1965 Springer Science+Business Media New York 1965 crystal.electron
描述The effects of electromagnetic radiation and high-energy par­ ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza­ tion, i. e. , the generation of excess charge carriers); and(b) dis­ turbance of the periodic structure of the crystal, i. e. , the forma­ tion of "structural radiation defects. " Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of "radiation de­ fects" is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi­ conductors. The same is true of photoelectric and similar phe­ nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter­ esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radi
出版日期Book 1965
关键词crystal; electron; semiconductor
版次1
doihttps://doi.org/10.1007/978-1-4899-2720-0
isbn_softcover978-1-4899-2722-4
isbn_ebook978-1-4899-2720-0
copyrightSpringer Science+Business Media New York 1965
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Ionization of Semiconductors by Charged High-Energy Particles,tation of bound electrons. These energy losses determine the particle range in a given substance and are known as the ionization losses, although in fact not all the electron transitions are accompanied by the ionization, because excitation is possible. When fast electrons pass through matter, some
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Radiative Recombination in Semiconductors; Possibility of the Amplification and Generation of Lightfects or impurities, are frequently processes of the higher order. This applies to germanium and silicon where the overall recombination rate is governed by non-radiative transitions. Nevertheless, investigations of the spectra of recombination radiation, first detected by O. V. Losev in silicon car
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Changes in the Properties of Semiconductors Due to Bombardment with Fast Electrons, Gamma Rays, Neunce the construction of the first nuclear reactors. Somewhat later, beginning around 1950, studies of the processes of radiation-defect formation and of the influence of these defects on the properties of semiconductors have attracted the attention of many investigators in connection with the furthe
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Book 1965lectrons (the special case is internal ioniza­ tion, i. e. , the generation of excess charge carriers); and(b) dis­ turbance of the periodic structure of the crystal, i. e. , the forma­ tion of "structural radiation defects. " Naturally, investigations of the effects of radiation on semiconductors c
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ation of electrons (the special case is internal ioniza­ tion, i. e. , the generation of excess charge carriers); and(b) dis­ turbance of the periodic structure of the crystal, i. e. , the forma­ tion of "structural radiation defects. " Naturally, investigations of the effects of radiation on semico
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Absorption of Light by Semiconductors,(the excitation of lattice vibrations, interband electron transitions, etc.), but from the point of view of the problems to be discussed later, it is the former processes, especially photoionization, that are particularly interesting.
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