Titlebook: Distortion Analysis of Analog Integrated Circuits; Piet Wambacq,Willy Sansen Book 1998 Springer Science+Business Media New York 1998 CMOS.

LAP

MOS transistor models for distortion analysis,rs of older technologies. Some of these effects have given rise to additional technological steps in the processing of a MOS transistor, such as the use of lightly-doped drains. As a result, a modern deep submicron transistor is a more complicated structure than a transistor of older technologies.

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MOS transistor models for distortion analysis,ies with effective gate lengths of 0.35. are in use in 1997. In these small devices several physical effects play a much larger role than in transistors of older technologies. Some of these effects have given rise to additional technological steps in the processing of a MOS transistor, such as the u

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Weakly nonlinear behavior of basic analog building blocks,sist of analog building blocks, has been studied already for some particular classes of circuits, such as time-continuous filters [Groen 94, Tsiv 93a, Tsiv 94]. A treatment of these circuits would require a thorough study of those classes of circuits, which is beyond the scope of this book. Instead,

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Measurements of basic nonlinearities of transistors,apter concentrates on how higher-order derivatives of the transistor current can be measured accurately. The measurement results could be used in device parameter extraction. Only measurements on a bipolar transistor are presented in this chapter. The principles can be applied to MOS transistors as

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