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Titlebook: Disordered Materials; Science and Technolo David Adler,Brian B. Schwartz,Marvin Silver Book 1991 Plenum Press, New York 1991 adsorption.cer

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https://doi.org/10.1007/978-3-642-99356-5d as low-mobility electronic intrinsic semiconductors with a temperature-activated electrical conductivity . = ..×exp(-Δ.) which sometimes extends well into the molten state.. They remain intrinsic with changed Δ. when their composition is changed.. These alloys transmit infrared light up to an expo
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https://doi.org/10.1007/978-3-642-99356-5ing variation in order and conductivity have been made the basis of memory devices.(1) In this paper, we present our observations on induced conductivity transformation from one state to another. Because the conductivity involves structural changes in the bulk we relate our results to those obtained
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https://doi.org/10.1007/978-3-642-99356-5 and Te, which can be formed in both the amorphous and crystalline form.). In the final day of this meeting we would like to tie the basic physics learned from these discussions to more material ends — that is to the design of materials which can be utilized for the basic differences between crystal
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https://doi.org/10.1007/978-3-642-99356-5ing short pulses of laser light and evidenced by a sharp change in optical transmission and reflection. This optical switching behavior is analogous to the memory-type electrical switching effect in these materials which has received wide attention. since the observation by S. R. Ovshinsky. of both
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https://doi.org/10.1007/978-3-642-99356-5efinitively established as electronic processes,., there is one major remaining problem—the nature of the localized states in the gap of these materials. In this Comment I address this subject, with emphasis on their role in the switching transition.
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