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Titlebook: Disorder and Order in the Solid State; Concepts and Devices Roger W. Pryor,Brian B. Schwartz,Stanford R. Ovshi Book 1988 Springer Science+B

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发表于 2025-3-21 16:34:01 | 显示全部楼层 |阅读模式
书目名称Disorder and Order in the Solid State
副标题Concepts and Devices
编辑Roger W. Pryor,Brian B. Schwartz,Stanford R. Ovshi
视频video
丛书名称Institute for Amorphous Studies Series
图书封面Titlebook: Disorder and Order in the Solid State; Concepts and Devices Roger W. Pryor,Brian B. Schwartz,Stanford R. Ovshi Book 1988 Springer Science+B
描述This Festschrift is an outgrowth of a collection of papers presented as a conference in honor of Professor Heinz K. Henisch on his sixty-fifth birthday held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices. He has made seminal contributions to the understanding of semiconductor switching devices and contact properties. He has an outstandin~ reputation as an expositor of science. His seminars and lectures are always deep. lucid and witty. He received his doctorate in Physics from the University of Reading and then joined the faculty. In 1963. he accepted a position in the Department of Physics at Pennsylvania State University. While at Penn State. Dr. Henisch broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institu
出版日期Book 1988
关键词Magnetron; chemistry; crystal; defects; electron; electrons; ferroelectrics; microwave; model; modeling; photo
版次1
doihttps://doi.org/10.1007/978-1-4613-1027-3
isbn_softcover978-1-4612-8299-0
isbn_ebook978-1-4613-1027-3
copyrightSpringer Science+Business Media New York 1988
The information of publication is updating

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发表于 2025-3-21 22:39:14 | 显示全部楼层
Recent Developments in Ovonic Threshold Switching Device Technologyterning and dry etching. It required the development of a conformal, inorganic passivation layer. That was achieved, assuring inherent high stability and long life. The switching material in the device has also been modified to incorporate hydrogen, which significantly improves the stability and uni
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,Zeichnen für Fortgeschrittene,terning and dry etching. It required the development of a conformal, inorganic passivation layer. That was achieved, assuring inherent high stability and long life. The switching material in the device has also been modified to incorporate hydrogen, which significantly improves the stability and uni
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Book 1988h broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institu
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Dr. Henisch broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institu978-1-4612-8299-0978-1-4613-1027-3
发表于 2025-3-22 23:40:53 | 显示全部楼层
Book 1988y held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices. He has m
发表于 2025-3-23 03:04:56 | 显示全部楼层
Switching and Memory Effects in Thin Amorphous Chalcogenide Films — Thermophonic Studiesurther, the results concur with a model where the sample heats during the delay time; the heating causes the fields to rearrange and a critical value is reached near an electrode, whereby a carrier generation process is encouraged.
发表于 2025-3-23 07:38:59 | 显示全部楼层
On the Impedance Calculation of Thick MIM Barriers of the (M.-I-M.) barrier leading directly to an incremental equivalent circuit representation is given. It is found that the device may be modeled satisfactorily in the low frequency range for all bias conditions by a resistor connected in parallel with a capacitor.
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