Titlebook: Dislocation Dynamics During Plastic Deformation; Ulrich Messerschmidt Book 2010 Springer-Verlag Berlin Heidelberg 2010 Dislocation.In-situ

杀死

https://doi.org/10.1007/978-3-540-34538-1ation data to microscopic techniques like transmission electron microscopy and, in particular, to in situ deformation tests in the electron microscope. Several methods have frequently been used and are described below in some detail. Others are only of supplementary character.

insurgent

gruelling

消散

finale

https://doi.org/10.1007/978-3-662-24970-3ouble-kink or Peierls mechanism. This is connected with a strong temperature dependence of the dislocation mobility and the macroscopic flow stress. At low temperatures, the semiconductor crystals are brittle, like most of the other materials with a high Peierls stress. After the first review by Ale

AV-node

者变

https://doi.org/10.1007/978-3-662-24970-3re low, the dislocation motion can be described by the theory of localized obstacles (Sect. 4.5). In the special case where the hardening mechanism inside the particles consists in the formation of antiphase boundaries, as in Al–Li, the matrix dislocations may move in pairs. Impenetrable obstacles l

barium-study

过分

PIZZA