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Titlebook: Digital Memory and Storage; Walter E. Proebster Book 1978 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH, Braunschweig 1978 Access.Computer

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Electrically Alterable MOS-ROMs, with Particular Emphasis on the Floating Gate Typeer one drawback of the customary read-write semiconductor memories with random access (RAMs), namely the volatility of the stored information: The stored information may be lost in case of disconnection or unintended interruption of the supply voltages, even if the dropout lasts only a few milliseco
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Physical Principles of Magnetic Bubble Domain Memory Devicesization is perpendicular to the plane of the plate (Fig. 1). The magnetic bubble is separated from its environment by the cylindrical magnetic domain wall. The magnetization in the domain wall rotates through 180 degrees. In a bubble domain memory the presence of a magnetic bubble at a particular pl
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Ferromagnetic Domain Memoriesy known. A review presented by the author describes the state of technology up to 1976 [1]. The present contribution will deal with the progress that has been achieved in the meantime. Today, ferromagnetic domain memories are poised on the threshold of many practical applications, and they must be c
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Materials for Optical Data Storesperties of coherent light often masked the difficulties with the introduction of optical storage techniques. By these means, systems were proposed superior to existing stores by orders of magnitude but with the disadvantage of non-feasibility. It had been overlooked that the limits of optical method
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Romantic Love in Cultural ContextsBEAMOS — Beam Accessable MOS — is the best known synonym for recent developments in the field of electronic beam memories.
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On the Development of Digital MemoriesIn this talk on the history of the evolution of digital memories I will make a very subjective selection. I will emphasize those memories whose inventors I have become acquainted with personally, and those developments in which I have been involved myself.
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