Titlebook: Digital BiCMOS Integrated Circuit Design; Sherif H. K. Embabi,Abdellatif Bellaouar,Mohamed I Book 1993 Springer Science+Business Media New

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Process Technology,xamples for an N-well CMOS process and a twin-tub CMOS process are considered. Section 2.2. deals with bipolar technology with emphasis on advanced bipolar structures. The topic of the isolation techniques used for both bipolar and CMOS is addressed in Section 2.3. In Section 2.4. we discuss the sim

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Device Design Considerations,tions 3.1. and 3.2.]. The trade offs involved in designing BiCMOS are presented in Section 3.3. The study of Sections 3.1. to 3.3. is based on classical first order analyses, whose details can be found in [.–.]. The topic of device scaling has been addressed in this chapter because of the significan

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Device Modeling,pters 5. to 7., and to introduce commonly used models of both devices [Sections 4.1. and 4.2.]. In this chapter we consider simple analytical models which can be used for first order circuit analysis and design. The more sophisticated SPICE device models are also presented to allow the reader to app

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MOS Digital Integrated Circuits,. Digital NMOS circuits are covered for completeness. They also highlight commonly used circuit analysis and design techniques. Circuit techniques as well as circuit structures are presented including CMOS transmission gate logic, dynamic CMOS, domino logic, NORA and Zipper circuit structures, CMOS

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BiCMOS Digital Integrated Circuits,e circuits. This chapter starts with a brief comparison between MOS and bipolar devices in terms of their current drive capabilities. The advantage of using bipolar devices for the totem-pole structure is demonstrated in Section 7.2. In that, we study the DC and transient characteristics of the BiCM

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