Titlebook: Diffusion in Materials; A. L. Laskar,J. L. Bocquet,C. Monty Book 1990 Kluwer Academic Publishers 1990 Metall.X-Ray.alloy.ceramics.crystal.

GNAT

Vacancy-Mediated Interstitial-Substitutional Diffusion in Semiconducting and Metallic Matricesty of dislocations is usually unavoidable. This difficulty can be overcome by analyzing the diffusion behaviour in a narrow region below the surface as will be shown for the two-stage penetration profiles observed after Co diffusion in Nb.

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枫树

https://doi.org/10.1007/978-3-030-11738-2ty of dislocations is usually unavoidable. This difficulty can be overcome by analyzing the diffusion behaviour in a narrow region below the surface as will be shown for the two-stage penetration profiles observed after Co diffusion in Nb.

切碎

出处

Korporatismus und das deutsche Rentensystem, dynamical features of defects movement in crystalline solids are briefly reviewed. Recent developments including corrections to the classical rate theory for short-time memory effects in defect migration in solids are discussed.

单独