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Titlebook: Differentiated Layout Styles for MOSFETs; Electrical Behavior Salvador Pinillos Gimenez,Egon Henrique Salerno Ga Book 2023 The Editor(s) (

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发表于 2025-3-21 19:29:47 | 显示全部楼层 |阅读模式
书目名称Differentiated Layout Styles for MOSFETs
副标题Electrical Behavior
编辑Salvador Pinillos Gimenez,Egon Henrique Salerno Ga
视频video
概述Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs.Describes innovative layout styles for MOSFETs that don’t entail an additio
图书封面Titlebook: Differentiated Layout Styles for MOSFETs; Electrical Behavior  Salvador Pinillos Gimenez,Egon Henrique Salerno Ga Book 2023 The Editor(s) (
描述.This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area..
出版日期Book 2023
关键词MOSFET Layout; RF CMOS ICs; High Temperature Electronics; High Temperature Effects on Semiconductors; Hi
版次1
doihttps://doi.org/10.1007/978-3-031-29086-2
isbn_softcover978-3-031-29088-6
isbn_ebook978-3-031-29086-2
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
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发表于 2025-3-21 21:26:09 | 显示全部楼层
978-3-031-29088-6The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
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发表于 2025-3-22 05:22:48 | 显示全部楼层
Małgorzata Przytulska,Juliusz L. KulikowskiIn this chapter, the effects of the high temperatures on the main electrical properties and characteristics of the semiconductors are presented.
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https://doi.org/10.1007/978-3-319-32229-2This chapter presents different unconventional layout styles for MOSFETs that can add new effects to their structures and boost their electrical performances and ionizing radiation tolerance. This layout technique does not add any extra cost to the current CMOS ICs manufacturing processes, it is only layout changing of the gate structure.
发表于 2025-3-22 17:37:26 | 显示全部楼层
Joe Lorkowski,Vladik KreinovichThis chapter discusses the most important concepts about the ionizing radiation (harsh environment) effects in the electrical parameters and figures of merit of MOSFETs.
发表于 2025-3-22 23:11:32 | 显示全部楼层
Introduction,This chapter contexts the importance of the differentiated layout styles for the Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) to boost their electrical performance and ionizing radiation tolerance.
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