| 书目名称 | Differentiated Layout Styles for MOSFETs |
| 副标题 | Electrical Behavior |
| 编辑 | Salvador Pinillos Gimenez,Egon Henrique Salerno Ga |
| 视频video | http://file.papertrans.cn/279/278901/278901.mp4 |
| 概述 | Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs.Describes innovative layout styles for MOSFETs that don’t entail an additio |
| 图书封面 |  |
| 描述 | .This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.. |
| 出版日期 | Book 2023 |
| 关键词 | MOSFET Layout; RF CMOS ICs; High Temperature Electronics; High Temperature Effects on Semiconductors; Hi |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-031-29086-2 |
| isbn_softcover | 978-3-031-29088-6 |
| isbn_ebook | 978-3-031-29086-2 |
| copyright | The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl |
|Archiver|手机版|小黑屋|
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