Titlebook: Dielectric Breakdown in Gigascale Electronics; Time Dependent Failu Juan Pablo Borja,Toh-Ming Lu,Joel Plawsky Book 2016 The Author(s) 2016

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General Theories,ter, we will discuss the most recent models for describing reliability trends in contemporary interconnect structures that employ low-. nano-porous films. A general comparison between model predictions at low field is presented.

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Introduction,tes when the dielectric is subjected to electrical stress beyond a critical point. In general, dielectric breakdown mechanisms in amorphous films can be categorized as either intrinsic or extrinsic in nature (He and Sun, ., 2012, p.166). Intrinsic failure corresponds to damage caused by the transpor

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General Theories,The fundamental concepts for each theory are presented as initially proposed by the authors. Some of the models explained in this section include the ., 1/., ., power-law, and the metal-catalyzed failure model. Commentary on the limitations for each model is provided. In the latter part of this chap

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Breakdown Experiments,. Techniques such as ramped voltage sweeps and bipolar applied field tests are utilized to characterize fundamental aspects of breakdown in thin low-. films. We studied intrinsic breakdown using inert (Au) and self-limiting electrodes (Al). Metal-catalyzed failure was investigated by employing react