Titlebook: Device Physics, Modeling, Technology, and Analysis for Silicon MESFET; Iraj Sadegh Amiri,Hossein Mohammadi,Mahdiar Hossei Book 2019 Spring

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Analytical Investigation of Subthreshold Performance of SOI MESFET Devices, parameters like dimensions of the channel, doping concentration, buried oxide thickness, and applied biases. For all three devices, the profile of surface potential and threshold voltage are plotted and discussed. The characteristics and excellence of the devices under study are investigated and co

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,Future Works on Silicon-on-Insulator Metal–Semiconductor Field Effect Transistors (SOI MESFETs),we introduced and discussed the previous analytical models presented for classical SOI MESFET developed in recent years and then we offered a new exact analytical model to display the subthreshold behavior of the device. The proposed non-classical architecture presented in this study can be well ext

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Krauß-Meldau,Joseph Krauß,Walter Steintaat hat deshalb diesen Gegenständen in neuester Zeit wieder eine erhöhte Aufmerksamkeit zuwenden müssen. Er hat nicht nur einzelne Verwaltungszweige ganz an sich gezogen, wie die Eisenbahnen, sondern auch in der Regelung der Haftpflicht, der Frauen- und Kinderarbeit und des Arbeiterschußes unmittel

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