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Titlebook: Deterministic Solvers for the Boltzmann Transport Equation; Sung-Min Hong,Anh-Tuan Pham,Christoph Jungemann Book 2011 Springer-Verlag/Wien

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发表于 2025-3-21 17:53:44 | 显示全部楼层 |阅读模式
书目名称Deterministic Solvers for the Boltzmann Transport Equation
编辑Sung-Min Hong,Anh-Tuan Pham,Christoph Jungemann
视频video
概述first book on deterministic Boltzmann solvers for semiconductor devices.first comprehensive description of the required numerical methods.describes very recent and significant advances in the field of
丛书名称Computational Microelectronics
图书封面Titlebook: Deterministic Solvers for the Boltzmann Transport Equation;  Sung-Min Hong,Anh-Tuan Pham,Christoph Jungemann Book 2011 Springer-Verlag/Wien
描述The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.
出版日期Book 2011
关键词deterministic solvers for Boltzmann equation; electron transport; semiconductor devices
版次1
doihttps://doi.org/10.1007/978-3-7091-0778-2
isbn_softcover978-3-7091-1119-2
isbn_ebook978-3-7091-0778-2Series ISSN 0179-0307
issn_series 0179-0307
copyrightSpringer-Verlag/Wien 2011
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978-3-7091-1119-2Springer-Verlag/Wien 2011
发表于 2025-3-22 07:11:00 | 显示全部楼层
Sung-Min Hong,Anh-Tuan Pham,Christoph Jungemannfirst book on deterministic Boltzmann solvers for semiconductor devices.first comprehensive description of the required numerical methods.describes very recent and significant advances in the field of
发表于 2025-3-22 09:15:22 | 显示全部楼层
Computational Microelectronicshttp://image.papertrans.cn/d/image/269345.jpg
发表于 2025-3-22 15:35:46 | 显示全部楼层
Abel Decmann,Attila Patócs,Peter IgazA device simulator for nanoscale strained SiGe double gate PMOSFETs based on the self-consistent solution of the 1D SE, 2D PE, and multi subband 1D BTE is developed, which is applicable for arbitrary crystallographic orientations and arbitrary channel directions.
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https://doi.org/10.1007/978-3-642-86814-6In this chapter a deterministic method used to solve the multisubband BTE is presented. The method is based on the Fourier expansion of the distribution function in the 2D .-space, which is analogous to the spherical harmonic expansion method for the bulk case [1].
发表于 2025-3-23 02:19:41 | 显示全部楼层
Bayesian Multilocus Linkage MappingThe electrostatic potential . (., .) in the device is the solution of the PE . where κ is dielectric constant, . is the positive elementary charge, and .. and .. are the ionized acceptor and donor concentrations, In this work the acceptors and donors are assumed to be completely ionized.
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