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Titlebook: Desorption Induced by Electronic Transitions DIET V; Proceedings of the F Alan R. Burns,Ellen B. Stechel,Dwight R. Jennison Conference proc

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Reinhold Sellien,Helmut Sellien1) + C1., is reported as a function of coverage at 193 and 248nm and near the threshold for photoelectron emission at 280nm. The ion emission cross-section is found to be enhanced for the first molecular layer in direct contact with the substrate. The crosssection for ion emission is very low; howev
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Reinhold Sellien,Helmut Sellienhat the high degree of electronic excitation present in a metal under femtosecond illumination is responsible for desorption. A model for this process involving desorption induced by multiple electronic excitations (DIMET) is presented.
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Reinhold Sellien,Helmut Sellienvanescent electric fields at the vacuum interface of a thin metal film evaporated onto a transparent substrate. We can unambiguously establish the change from a direct to a substrate-mediated excitation mechanism in the photodesorption of SO. (hν = 6.4 eV) on a quartz prism, with and without a 300 Å
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Reinhold Sellien,Helmut Selliennto the surface. Desorption of both neutrals and ions was observed. Neutral species were state-selectively detected by the resonanceenhanced multiphoton ionization technique. The yields of NO, NO., CO and CO. are proportional to the first, third, third, and ~1.8th powers of laser fluence, respective
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https://doi.org/10.1007/978-3-322-87453-5 has been investigated by the Time-of-Flight method. Absorption of visible or UV photons in large band gap materials can take place by multiphoton excitation [1] of valence band electrons, defects or particle inclusions [2]. The creation of an electron-hole plasma in the interaction volume of the la
发表于 2025-3-28 02:01:06 | 显示全部楼层
Reinhold Sellien,Helmut Selliens spectrometry with laser wavelengths of 1064, 355, and 266 nm. In sharp contrast, O. (H. and OH.) ions were observed in electron-induced desorption measurements with 300 eV electrons from the bare (water-covered) (1102) surface. Sapphire surfaces were characterized with low energy electron diffract
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Reinhold Sellien,Helmut Sellienrradiation. The product kinetic energy distribution (KED) for samples irradiated with 244 nm light, for Ag. and the impurity species K. resemble the KED of Al. desorbed from Al(111) and Al/sapphire (< KE > ≈3–4 eV). However, for resonance excitation (320 nm) of the Ag adlayer, all product KEDs shift
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Reinhold Sellien,Helmut SellienRecent surface photochemistry experiments — CF.I and SO. on Ag(111), and ASH. on GaAs(100) — are briefly described, emphasizing the important role played by the local surface structure.
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