Titlebook: Designing Transistor I.F. Amplifiers; W. Th. H. Hetterscheid Book 1966 Springer-Verlag Berlin Heidelberg 1966 applied physics.design.physi

眼界

Step-by-Step Method of Designing I.F. Amplifiers,ed in detail. Moreover, a method of designing such amplifiers has been developed which lends itself very well to systematic procedure. The object of this chapter is to present this systematic procedure in the form of a step-by-step method of design.

thrombosis

Design Charts,f the regeneration coefficient ., and also graphs in which the value of the reduced determinant . and the losses .. are plotted against .. The design charts are given for three different amplifier configurations, termed “I”, “II” and “III” respectively, see Fig. 15.1.

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https://doi.org/10.1007/978-3-662-39544-8applied physics; design; physics; transistor

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CLAIM

certitude

沙发

Slit-Lamp

GNSS Remote Sensing of the EnvironmentIn this Chapter an analysis of the extent to which spreads in transistor admittance parameters affect the performance of the amplifier with reverse AGC in the non controlled condition will be developed, and may be regarded as an example of how, in general, such an analysis can be carried out.

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Environmental Impact AssessmentAs described in Chapter 8, the gain performance of an I.F. amplifier can best be calculated by making use of the transimpedance concept. In this chapter this will be illustrated by calculating the performance of a vision I.F. amplifier equipped with the silicon planar transistors BF 167 and BF173.

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Spreads, Tolerances and Variations in Designing I.F. Amplifiers,When normal production type transistors, resistors, capacitors and inductors are used in the construction of an I.F. amplifier, allowance must be made in the design for the various manufacturing spreads and tolerances. Also, variations in operating conditions due to different environmental circumstances must be taken into account.