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Titlebook: Design for Manufacturability; From 1D to 4D for 90 Artur Balasinski Book 2014 Springer Science+Business Media New York 2014 22nm technology

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发表于 2025-3-21 19:01:47 | 显示全部楼层 |阅读模式
书目名称Design for Manufacturability
副标题From 1D to 4D for 90
编辑Artur Balasinski
视频video
概述Provides design for manufacturability guidelines on layout techniques for the most advanced, 22 nm technology nodes.Includes information valuable to layout designers, packaging engineers and quality e
图书封面Titlebook: Design for Manufacturability; From 1D to 4D for 90 Artur Balasinski Book 2014 Springer Science+Business Media New York 2014 22nm technology
描述This book explains integrated circuit design for manufacturability (DfM) at the product level (packaging, applications) and applies engineering DfM principles to the latest standards of product development at 22 nm technology nodes.  It is a valuable guide for layout designers, packaging engineers and quality engineers, covering DfM development from 1D to 4D, involving IC design flow setup, best practices, links to manufacturing and product definition, for process technologies down to 22 nm node, and product families including memories, logic, system-on-chip and system-in-package.
出版日期Book 2014
关键词22nm technology node DFM; 3D Design for manufacturability; DFM; Design for manufacturability; Integrated
版次1
doihttps://doi.org/10.1007/978-1-4614-1761-3
isbn_softcover978-1-4939-4342-5
isbn_ebook978-1-4614-1761-3
copyrightSpringer Science+Business Media New York 2014
The information of publication is updating

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New DfM Domain: Stress Effects,th chip and package stack design, is required to span orders of magnitude of physical dimensions. It should not only comprehend the effects of mechanical stresses in electrical responses of the circuits, but also their reliability impact.
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Book 2014nd quality engineers, covering DfM development from 1D to 4D, involving IC design flow setup, best practices, links to manufacturing and product definition, for process technologies down to 22 nm node, and product families including memories, logic, system-on-chip and system-in-package.
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New DfM Domain: Stress Effects,pting to divide the sources of such stress into the intentional and non-intentional ones or intrinsic and extrinsic. However, a better distinction would be whether we are able to take advantage of them in product implementation (intrinsic) or are they outside the device model space (extrinsic). When
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https://doi.org/10.1007/978-1-4614-1761-322nm technology node DFM; 3D Design for manufacturability; DFM; Design for manufacturability; Integrated
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