找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Design Exploration of Emerging Nano-scale Non-volatile Memory; Hao Yu,Yuhao Wang Book 2014 Springer Science+Business Media New York 2014 E

[复制链接]
查看: 41729|回复: 36
发表于 2025-3-21 19:41:50 | 显示全部楼层 |阅读模式
书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory
编辑Hao Yu,Yuhao Wang
视频video
概述Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices.Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory c
图书封面Titlebook: Design Exploration of Emerging Nano-scale Non-volatile Memory;  Hao Yu,Yuhao Wang Book 2014 Springer Science+Business Media New York 2014 E
描述.This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design..• Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices;.• Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization;.• Provides both theoretical analysis and practical examples to illustrate design methodologies;.• Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors. .
出版日期Book 2014
关键词Emerging Memory; Hybrid Memory Design; Memristic Dynamics; Memristors; Nano-scale Non-volatile Memory; No
版次1
doihttps://doi.org/10.1007/978-1-4939-0551-5
isbn_softcover978-1-4939-5497-1
isbn_ebook978-1-4939-0551-5
copyrightSpringer Science+Business Media New York 2014
The information of publication is updating

书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory影响因子(影响力)




书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory影响因子(影响力)学科排名




书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory网络公开度




书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory网络公开度学科排名




书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory被引频次




书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory被引频次学科排名




书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory年度引用




书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory年度引用学科排名




书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory读者反馈




书目名称Design Exploration of Emerging Nano-scale Non-volatile Memory读者反馈学科排名




单选投票, 共有 1 人参与投票
 

0票 0.00%

Perfect with Aesthetics

 

1票 100.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

0票 0.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 21:58:33 | 显示全部楼层
发表于 2025-3-22 02:54:55 | 显示全部楼层
发表于 2025-3-22 05:15:51 | 显示全部楼层
发表于 2025-3-22 09:26:19 | 显示全部楼层
l analysis and practical examples to illustrate design methodologies;.• Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors. .978-1-4939-5497-1978-1-4939-0551-5
发表于 2025-3-22 16:41:27 | 显示全部楼层
发表于 2025-3-22 17:46:33 | 显示全部楼层
Book 2014 on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/syste
发表于 2025-3-22 21:43:11 | 显示全部楼层
发表于 2025-3-23 03:05:49 | 显示全部楼层
Hiroyuki Motomura,Mizuki Matsunuma issue, and the ultimate solution requires a breakthrough on memory technology. Fortunately, many newly introduced emerging nonvolatile memory technologies have exhibited great potential for the future universal memory. This chapter reviews the existing semiconductor memory technologies as well as the emerging nonvolatile memory technologies.
发表于 2025-3-23 05:34:15 | 显示全部楼层
Laboratory Studies of Energy Budgetstion. In this chapter, three different memory cell designs, crossbar structure for ReRAM, 1T1R structure for STT-RAM, and tape-like structure for domain-wall nanowire, are discussed with the agreeing readout circuits illustrated. Their performance models are presented as well if they are different from traditional designs.
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-23 01:37
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表