Titlebook: Defects in SiO2 and Related Dielectrics: Science and Technology; G. Pacchioni,L. Skuja,D. L. Griscom Book 2000 Springer Science+Business M

压倒

manifestation

Russell C. Kirks,Flavio G. RochaUV absorption band of GODC at 242 nm corresponds to the S.—S. transition (Fig. 1). Concentration of GODC is controlled by glass and fiber fabrication conditions [.], and may amount to as much as N. = 10. cm..

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Individual

Book 2000tions to metal-oxide-semiconductordevices. Many of these applications directly involve point defects,which can either be introduced during the manufacturing process or byexposure to ionizing radiation. They can also be deliberately createdto exploit new technologies. .This book provides a general de

Obsequious

1568-2609 al applications to metal-oxide-semiconductordevices. Many of these applications directly involve point defects,which can either be introduced during the manufacturing process or byexposure to ionizing radiation. They can also be deliberately createdto exploit new technologies. .This book provides a

Custodian

Irascible

Multiaxial Diagnostic Approachestempt to duplicate these compendia, but will update them to some extent. A second major goal is to point out some of the present problems and conundrums in this area of research, as seen through the (somewhat myopic) eyes of the author, and to establish the crucial need for further research effort expended on the quartz single-crystal system.

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Fault Diagnosis of Deterministic Systemslasses, such as silica, sodium silicates, germanates, lead and phosphates glasses. Special attention was made to the influence of oxygen deficiency on localized states of glasses, in general, and to the nature of the 7.6 eV band in reduced silica, in particular.

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H.-W. Dehne,G. Adam,P. Halteren bulk network topology [., .], the vibrational spectra [.] and even the high pressure densification [.] of amorphous silica are reasonably well reproduced by empirical potentials, an explicit treatment of the electronic structure, missed in the classical studies, is mandatory to address several others important issues on the properties of silica.

物质

Priti A. Shah MD,Valentina Robila MD, PhDuate model for germanium oxygen-deficient centre with absorption band centred at 5.12 eV. Photobleaching of this defect is presumably accompanied by breaking of sixfold tetrahedra rings in the structure of germanosilicate glass and by creation of threefold rings.