Titlebook: Defect Complexes in Semiconductor Structures; Proceedings of the I J. Giber,F. Beleznay,J. László Conference proceedings 1983 Springer-Verl

Agitated

书目名称Defect Complexes in Semiconductor Structures影响因子(影响力)




书目名称Defect Complexes in Semiconductor Structures影响因子(影响力)学科排名




书目名称Defect Complexes in Semiconductor Structures网络公开度




书目名称Defect Complexes in Semiconductor Structures网络公开度学科排名




书目名称Defect Complexes in Semiconductor Structures被引频次




书目名称Defect Complexes in Semiconductor Structures被引频次学科排名




书目名称Defect Complexes in Semiconductor Structures年度引用




书目名称Defect Complexes in Semiconductor Structures年度引用学科排名




书目名称Defect Complexes in Semiconductor Structures读者反馈




书目名称Defect Complexes in Semiconductor Structures读者反馈学科排名

Canyon

Diverticulitis

指数

Photoluminescence of defect complexes in silicon,he photoluminescence (PL) technique: (i) Defects incorporating transition metal ions, (ii) defects related with oxygen and carbon doping the silicon and (iii) dislocation induced defects. We shall briefly discuss the state of the art from the PL point of view as well as present new data for all thre

哄骗

STEER

STEER

Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs,ting GaAs for the first time. These oscillations were found at DC electric fields above 500 Vcm., about one order of magnitude below the electric-field threshold for Gunn oscillations. The activation energy of the oscillation frequency was found to be 0.8 eV corresponding to the dominant electron tr

Iniquitous

FLING

ambivalence

Montserrat Corbera,Jaume Llibrellows quantitative calculations. The method is particularly powerful for classes of complexes such as aggregates of identical point defects when the electronic structure of the primary point defect is known and for defects in wide-gap materials. lie review results obtained for multivacancies in Si and for several defects in SiO..