Titlebook: Contemporary Trends in Semiconductor Devices; Theory, Experiment a Rupam Goswami,Rajesh Saha Book 2022 The Editor(s) (if applicable) and Th

Coronation

Book 2022hin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in

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Genteel

A Brief Insight into the Vertical Super-Thin Body (VSTB) MOSFETle FinFET and VSTB FET performance are also compared in terms of their performance. The proposed doping outline 3 (DO.) decreases off-state leakage current (.) by 99.4% over DO.. The gate overlap used on source/drain of 15 nm (OL.) improves on/off current ratio (.) and subthreshold swing (SS) over .

BROOK

Effect of Noise and Temperature on the Performance of Ferro-Tunnel FETemperature. When a ferroelectric material is stacked with the gate oxide of a Tunnel FET, band-to-band tunneling mechanism of the Tunnel FET along with negative capacitance of the ferroelectric material ensure a subthreshold swing below the Boltzmann limit of 60 mV/dec. The analysis of noise is pivo