Titlebook: Computational Electronics; Dragica Vasileska,Stephen M. Goodnick Book 2006 Springer Nature Switzerland AG 2006

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Computational Electronics978-3-031-01690-5Series ISSN 1932-1252 Series E-ISSN 1932-1716

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Introduction to Computational Electronics,cal phenomena at short dimensions occur, and limitations in material properties are reached [1]. In addition to the problems related to the understanding of actual operation of ultrasmall devices, the reduced feature sizes require more complicated and time-consuming manufacturing processes. This fac

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The Drift-Diffusion Equations and Their Numerical Solution,iclassical description of charge transport via the Boltzmann Transport Equation (BTE) in Chapter 2. However, the direct solution of the full BTE is challenging computationally, particularly when combined with field solvers for device simulation. Therefore, for traditional semiconductor device modeli

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Hydrodynamic Model,it was hypothesized that the effective carrier injection velocity from the source into the channel would reach the limit of the saturation velocity and remain there as longitudinal electric fields increased beyond the onset value for velocity saturation. However, theoretical work indicated that velo

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