Titlebook: Compound Semiconductors Strained Layers and Devices; S. Jain,M. Willander,R. Overstraeten Book 2000 Springer Science+Business Media New Yo

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书目名称Compound Semiconductors Strained Layers and Devices影响因子(影响力)




书目名称Compound Semiconductors Strained Layers and Devices影响因子(影响力)学科排名




书目名称Compound Semiconductors Strained Layers and Devices网络公开度




书目名称Compound Semiconductors Strained Layers and Devices网络公开度学科排名




书目名称Compound Semiconductors Strained Layers and Devices被引频次




书目名称Compound Semiconductors Strained Layers and Devices被引频次学科排名




书目名称Compound Semiconductors Strained Layers and Devices年度引用




书目名称Compound Semiconductors Strained Layers and Devices年度引用学科排名




书目名称Compound Semiconductors Strained Layers and Devices读者反馈




书目名称Compound Semiconductors Strained Layers and Devices读者反馈学科排名

搬运工

Measured

Brocas-Area

巧思

Strain relaxation and defects,for several cases in this chapter. Strain relaxation has been measured using a very large number of techniques. Many different semiconductor heterostructures have been investigated. Additional measurements of strain are discussed along with the optical properties in .

nitric-oxide

Summary and conclusions,GaAs, AlxGa1–xAs/GaAs, InP/InP and Ga047In0.53As/InP using both the hydrogen and the nitrogen as the carrier gases. For GaAs and InP the crystal quality and purity of the epilayers grown in nitrogen was comparable to those of the epilayers grown in hydrogen.

nitric-oxide

Overview: 978-1-4613-7000-0978-1-4615-4441-8

Ovulation

Electronic Materials Serieshttp://image.papertrans.cn/c/image/231861.jpg

欺骗世家

Thyroiditis

https://doi.org/10.1007/978-3-658-15423-3Band structure of unstrained zinc blende semiconductors is shown schematically in Fig. 5.1(a). A semiconductor layer grown on a substrate of different material is generally strained. The strain is biaxial. We discuss the modification in the bandstructure caused by the strain in this section.