Titlebook: Compact Models and Performance Investigations for Subthreshold Interconnects; Rohit Dhiman,Rajeevan Chandel Book 2015 Springer India 2015

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https://doi.org/10.1007/978-3-663-11397-3ral key process parameters during the device fabrication. The increase in variability affects the design of low-power circuits in the nanometer regime. This causes fluctuations in the IC performance. Therefore, the relative impact of process variations on power and timing has become more significant with each technology generation.

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Variability in Subthreshold Interconnects,ral key process parameters during the device fabrication. The increase in variability affects the design of low-power circuits in the nanometer regime. This causes fluctuations in the IC performance. Therefore, the relative impact of process variations on power and timing has become more significant with each technology generation.

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https://doi.org/10.1007/978-3-531-90499-3en interconnects is reduced and the thickness of the conductor is increased in order to reduce the parasitic resistance of the conductors. The coupling capacitance has therefore increased significantly and has become comparable to the interconnect capacitance.

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Design Challenges in Subthreshold Interconnect Circuits,l or polysilicon wires which connect billions of active devices to carry signals within a VLSI chip. There are a number of such wires in the whole chip. Of these, the length of long interconnects in large chips is of the order of 10 mm.

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Soziale Exklusion und Wohlfahrtsstaat,exponential growth of the total number of interconnects/wires as the feature size of MOS transistors decreases in scaled deep submicron CMOS technologies. Interconnect length, however, has not scaled down with feature size and remains long relative to other on-chip geometries. Interconnects are meta