Titlebook: Chemical Vapor Deposition; Thermal and Plasma D Srinivasan Sivaram Book 1995 Springer Science+Business Media New York 1995 chemistry.deposi

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书目名称Chemical Vapor Deposition影响因子(影响力)




书目名称Chemical Vapor Deposition影响因子(影响力)学科排名




书目名称Chemical Vapor Deposition网络公开度




书目名称Chemical Vapor Deposition网络公开度学科排名




书目名称Chemical Vapor Deposition被引频次




书目名称Chemical Vapor Deposition被引频次学科排名




书目名称Chemical Vapor Deposition年度引用




书目名称Chemical Vapor Deposition年度引用学科排名




书目名称Chemical Vapor Deposition读者反馈




书目名称Chemical Vapor Deposition读者反馈学科排名

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FUSE

Manufacturability,process. It provides a framework to increase the efficiency with which processes can be made manufacturable. I believe this framework should be a prerequisite for all process/equipment engineers who hope to work in the microelectronic industry.

Coma704

Chemical Equilibrium and Kinetics,. This reaction is usually endothermic and the energy needed for the forward progress of this reaction can come from many sources: thermal, electrical plasmas, photons, etc. The earliest and most common means of supplying energy to the CVD reaction is by heating the substrate and this technique is c

残暴

Reactor Design for Thermal CVD,products. We will treat this subject with a narrower focus: thin films with desired properties from gaseous sources. Such a discussion may be insufficient for the design of a commercial reactor from first principles. However, for the modification of an existing reactor for the purpose of tailoring f

esthetician

esthetician

慢跑

CVD of Conductors,As device dimensions and film thicknesses scale down, thin film properties of conductors (see Chapter 2) begin to dominate and special processing conditions become necessary. For instance, it becomes essential to lower the processing temperature so as to minimize undesirable thermally activated proc

Painstaking

CVD of Dielectrics,s are more varied when compared to the applications of conductors. Silicon-based integrated circuit technology owes its popularity in no small measure to the existence of a stable native dielectric, SiO.. SiO. is used as the gate oxide in MOS devices, where it dictates their performance. Dielectrics

Postulate

CVD of Semiconductors,n theory, the growth of single-crystal thin films to match the substrate lattice, or epitaxy, is possible through most common methods of thin film deposition, such as evaporation, PVD, and CVD. However, CVD, liquid phase epitaxy and molecular beam epitaxy are the most commonly used methods of epitax