Titlebook: Channel and Source Coding for Non-Volatile Flash Memories; Mohammed Rajab Book 2020 The Editor(s) (if applicable) and The Author(s), under

鞭打

Schriftenreihe der Institute für Systemdynamik (ISD) und optische Systeme (IOS)http://image.papertrans.cn/c/image/223849.jpg

天气

笨重

吞吞吐吐

https://doi.org/10.1007/978-94-010-2185-2The introduction of MLC and TLC technologies reduced the reliability of flash memories significantly compared with SLC flash [65, 5]. With MLC and TLC flash cells the error probability varies for the different states. Hence asymmetric models are required to characterize the flash channel, e.g. the binary asymmetric channel (BAC) [66, 20, 21, 8].

擦掉

Ion-Binding Phenomena of Polyelectrolytes,In recent years, mostly hard-input algebraic decoding was used for error correction in flash memories [137, 94, 72]. ECC based on soft-input decoding can significantly improve the reliability of flash memories.

EXUDE

Polyelectrolytes and NanoparticlesThis dissertation has proposed various applicable techniques to improve the reliability of NAND flash memory. In summary, this dissertation makes the following contributions.

Mortar

难管

起来了

cutlery